SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress the occurrence of leakage currents in a capacitor using a dielectric film, and to provide a method of manufacturing the device.

SOLUTION: The semiconductor device is provided with a semiconductor substrate (s) and a capacitor (10) having a lower electrode (200) provided above the substrate (s), the dielectric film (300) provided above the electrode (200), and an upper electrode (400) provided above the dielectric film (300). The upper electrode (400) is composed of an ABO3perovskite-type oxide and contains a metal oxide containing the Ru element as a B-site element. In addition, the semiconductor device is also provided with a metallic film (120) containing the Ti element between the dielectric film (300) and upper electrode (400).

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