发明名称 Semiconductor devices having bonded interfaces and methods for making the same
摘要 A semiconductor-based structure includes first, second, and intermediate layers, with the intermediate layer bonded directly to the first layer, and in contact with the second layer. Parallel to the bonded interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer, though first and second layers are each formed of essentially the same semiconductor. A method for making a semiconductor-based structure includes directly bonding a first layer to an intermediate layer, and providing a second layer in contact with the intermediate layer.
申请公布号 US2005280081(A1) 申请公布日期 2005.12.22
申请号 US20040956485 申请日期 2004.10.01
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 ISAACSON DAVID M.;TARASCHI GIANNI;FITZGERALD EUGENE A.
分类号 H01L21/3205;H01L21/8238;H01L29/06;H01L29/10;H01L29/49;H01L31/0336;(IPC1-7):H01L31/033 主分类号 H01L21/3205
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