| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SOI substrate devising a countermeasure to a charging and a method for an exposure to charged-particle beams using the SOI substrate in an charged-particle beam exposure. <P>SOLUTION: In the SOI substrate; a single-crystal silicon film, a resist applied on the surface of the silicon film, and an exposed foundation semiconductor layer can be brought into contact electrically by an antistatic film having a conductivity when the foundation semiconductor layer is exposed by the charged-particle beams, because the foundation semiconductor layer is exposed without forming a single-crystal semiconductor layer and an insulating layer in the partial region of a semiconductor substrate. The resist and the single-crystal semiconductor layer can also be grounded together with the foundation semiconductor layer through a grounding terminal by fixing the SOI substrate under the state on a sample table having the grounding terminal on a surface by using an electrostatic attraction method. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
