| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory having a power source sequence for reinforcing the driving performance of a negative power source generation circuit. <P>SOLUTION: This semiconductor integrated circuit device for driving a first region and a second region provided through a capacity to a positive internal power source and a negative internal power source, respectively has a first internal power source generation circuit for driving the first region for the positive internal power source. Further, the semiconductor integrated circuit device has a power source sequencer for starting the first internal power source generation circuit to drive the first region to overdrive potential higher than positive internal power source potential while clamping the second region to prescribed potential, subsequently releasing the clamped state of the second region to step down the first region from the overdrive potential toward positive internal power source potential and stepping down the second region to negative potential by capacity coupling. Since a negative power source is stepped down by capacity coupling, the driving performance of the negative internal power source generation circuit can be reinforced. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
