SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device that is of high output and highly efficient and can suppress an increase in element resistance or differential resistance element due to discontinuity of a band even if a p-type layer is added with low diffusion, so as to establish an optional device characteristic, and to provide its manufacturing method. SOLUTION: In the semiconductor laser device, an n-type clad layer 5, an active layer 4 and a p-type clad layer 3 that are made of a group III-V compound semiconductor respectively are formed above a substrate 7 made of an n-type GaAs, and a cap layer 1 made of a p-type GaAs is formed on the p-type clad layer 3 with a p-type band discontinuity mitigation layer 2 made of a group III-V compound semiconductor in-between. The p-type clad layer 3, the p-type band discontinuity mitigation layer 2 and the p-type cap layer 1 are added with a p-type impurity lower in diffusion than Zn, e.g. Mg, and the p-type band discontinuity mitigation layer 2 has a p-type impurity concentration of 2.5×1018cm-3or more. COPYRIGHT: (C)2006,JPO&NCIPI