发明名称 |
Split source RF MOSFET device |
摘要 |
An RF MOS transistor having improved AC output conductance and AC output capacitance includes parallel interdigitated source and drain regions separated by channel regions and overlying gates. Grounded tap regions contacting an underlying well are placed contiguous to source regions and reduce distributed backgate resistance, lower backgate channel modulation, and lower output conductance.
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申请公布号 |
US2005280096(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050210725 |
申请日期 |
2005.08.25 |
申请人 |
BROADCOM CORPORATION |
发明人 |
MCKAY THOMAS G.;ALLOTT STEPHEN |
分类号 |
H01L29/06;H01L29/10;H01L29/417;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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