| 摘要 |
PROBLEM TO BE SOLVED: To enlarge the single crystallization region of a crystalline thin film and to improve its productivity in a method for manufacturing the crystalline thin film by irradiating a precursor semiconductor thin film with a main beam and a sub beam. SOLUTION: The manufacturing method of the crystalline thin film by irradiating the precursor semiconductor thin film with the main beam and the sub beam in superposition in time and/or in space comprises a first process for casting the sub beam at least once before casting the main beam and the sub beam in superposition, and a second process for casting the main beam and the sub beam in superposition. In the second process, the main beam is cast just before finishing of irradiation of the sub beam. COPYRIGHT: (C)2006,JPO&NCIPI
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