发明名称 MEMS structure and method for fabricating the same
摘要 A MEMS structure includes a floating space formed on the upper silicon layer by a first dry etching, and then dry etched to a predeterminded depth on the lower silicon layer by etching gas supplied through the etched holes from which the oxide film has been removed at the bottom surface thereof in a second dry etching process, so as to float the movable portion; and the oxide film for preventing electrical short circuit remaining on the lower surface of the movable portion so as to correspond to the lower silicon layer leaving the floating space therebetween.
申请公布号 US2005280106(A1) 申请公布日期 2005.12.22
申请号 US20040927459 申请日期 2004.08.27
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM JONG S.;LEE SUNG J.;LEE RO W.
分类号 B81B7/02;B81C1/00;H01L21/00;H01L27/14;(IPC1-7):H01L27/14 主分类号 B81B7/02
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