发明名称 |
Optical proximity correction |
摘要 |
A method of carrying out optical proximity correction in the design of a reticle for exposing a photoresist in photolithography includes generating a plurality of sets of rules reflecting the relationship between linewidth and line density on the photoresist, each set of rules corresponding to a different region of the image field of the lens, and carrying out optical proximity correction for each region of the image field making use of the corresponding set of rules. <IMAGE> |
申请公布号 |
GB2375403(B) |
申请公布日期 |
2005.12.21 |
申请号 |
GB20010011529 |
申请日期 |
2001.05.11 |
申请人 |
* MITEL SEMICONDUCTOR LIMITED;* ZARLINK SEMICONDUCTOR LIMITED;* ZARLINK SEMICONDUCTOR LIMITED |
发明人 |
BRIAN * MARTIN |
分类号 |
G03F1/00;G03F1/36;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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