发明名称 |
SEMICONDUCTOR DEVICES AND METHODS |
摘要 |
<p>By implementing oxidation to obtain a native oxide of aluminum (581,582) after a device has been metallized (505,565), advantages can be obtained in device operation, reliability, and life. A method of making a semiconductor device is disclosed and includes the following steps: forming a structure comprising layers of III-V semiconductor material, at least one of the layers being an aluminum-beating III-V semiconductor material (530,550); applying metal electrodes (505,565) to the structure to form a medalist semiconductor structure; and heating the medalist structure in a water-containing environment to convert a portion of the aluminum-bearing III-V semiconductor material to a native oxide of aluminum (581,582).</p> |
申请公布号 |
EP0754349(B1) |
申请公布日期 |
2005.12.21 |
申请号 |
EP19950915574 |
申请日期 |
1995.04.06 |
申请人 |
THE BOARD OF TRUSTEES FOR THE UNIVERSITY OF ILLINOIS |
发明人 |
HOLONYAK, NICK, JR.;MARANOWSKI, STEVEN, A.;KISH, FRED, A. |
分类号 |
H01L21/28;H01L21/316;H01L21/336;H01L29/51;H01L33/00;H01L33/30;H01S5/00;H01S5/16;H01S5/22;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01L21/316;H01S3/085 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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