发明名称 Semiconductor chip stack structure
摘要 Semiconductor chip stack structure and method are provided. A first chip has a first metal bump formed on a first electrode pad. The first chip is attached to and electrically connected to a substrate. The electrical connection is made by a bump reverse bonding method in which one end of a bonding wire is ball-bonded to the substrate and the other end is stitch-bonded to the metal bump. The second chip is stacked on the first chip. The bonding wire is substantially parallel with a top surface of the first chip. Accordingly, the chip stack structure and method minimize a space between the first chip and the second chip, thereby reducing the total height of semiconductor chip stack.
申请公布号 US6977439(B2) 申请公布日期 2005.12.20
申请号 US20020326775 申请日期 2002.12.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG IN-KU;AHN SANG-HO;YANG SUN-MO
分类号 H01L23/12;H01L25/065;(IPC1-7):H01L23/48;H01L23/02 主分类号 H01L23/12
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