发明名称 |
Semiconductor chip stack structure |
摘要 |
Semiconductor chip stack structure and method are provided. A first chip has a first metal bump formed on a first electrode pad. The first chip is attached to and electrically connected to a substrate. The electrical connection is made by a bump reverse bonding method in which one end of a bonding wire is ball-bonded to the substrate and the other end is stitch-bonded to the metal bump. The second chip is stacked on the first chip. The bonding wire is substantially parallel with a top surface of the first chip. Accordingly, the chip stack structure and method minimize a space between the first chip and the second chip, thereby reducing the total height of semiconductor chip stack.
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申请公布号 |
US6977439(B2) |
申请公布日期 |
2005.12.20 |
申请号 |
US20020326775 |
申请日期 |
2002.12.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG IN-KU;AHN SANG-HO;YANG SUN-MO |
分类号 |
H01L23/12;H01L25/065;(IPC1-7):H01L23/48;H01L23/02 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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