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发明名称
具额外层之单晶矽感测器及其制造方法
摘要
一种以绝缘层上覆矽为基材的微机电系统元件,其具有基础层、元件层,与介于基础层与元件层间之绝缘层。此元件并有部份与元件层相隔之沈积层。元件层系介于绝缘层与沈积层之间。
申请公布号
TW200540102
申请公布日期
2005.12.16
申请号
TW094105972
申请日期
2005.03.01
申请人
亚德诺公司
发明人
纽汤玛;布尼翰
分类号
B81B7/00;G01P15/02
主分类号
B81B7/00
代理机构
代理人
黄庆源;陈彦希
主权项
地址
美国
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