发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A semiconductor manufacturing apparatus capable of removing metal derived from an electrode from ozone generated by the silent discharge is provided. The ozone generated by the silent discharge between electrodes in the ozone generating unit is permeated through a molecule permeable film based on pressure difference between the back and the front of the molecule permeable film constituting a filter. The permeated ozone is supplied together with separately-generated water vapor to a resist surface on a semiconductor wafer to remove the resist. In the resist removal described above, the high-concentration metal contamination due to the metal derived from an electrode can be prevented.
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申请公布号 |
US2005274694(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20050148403 |
申请日期 |
2005.06.09 |
申请人 |
FUNABASHI MICHIMASA;OMATA SHIGERU;TOMA NOBUAKI;FUKUSHIMA MASATOSHI |
发明人 |
FUNABASHI MICHIMASA;OMATA SHIGERU;TOMA NOBUAKI;FUKUSHIMA MASATOSHI |
分类号 |
B44C1/22;C23C16/44;C23G1/00;G03F7/42;H01L21/302;(IPC1-7):B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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