CIRCUIT SIMULATION METHOD, DEVICE MODEL, AND SIMULATION CIRCUIT

摘要

PROBLEM TO BE SOLVED: To overcome the problem that a conventional circuit simulation method degrades simulation accuracy of characteristics of a device with temperature dependence because a dynamic change of an element temperature and exchange of heat quantity between elements are not considered. SOLUTION: By using a device model provided with both an electrical model 1 representing electrical characteristics of the element and a heat model 2 representing thermal characteristics of the same element, all of a plurality of elements structuring a semiconductor integrated circuit to be designed are converted into the model, and a thermal resistance is inserted between the elements where heat is exchanged. Thereby, electrical and thermal circuit networks are constructed. The electrical characteristics and thermal characteristics of each of the elements in the circuit are acquired by setting up a circuit equation and thermal equation on the electrical and thermal circuit networks, and solving them simultaneously. Thereby, highly accurate device characteristics accurately reflecting a temperature change in simulation on the respective elements in the circuit can be provided. COPYRIGHT: (C)2006,JPO&NCIPI