| 摘要 |
<P>PROBLEM TO BE SOLVED: To stably form a thin film of high quality with sufficient production efficiency by using a vapor phase growth apparatus. <P>SOLUTION: In this method, there is formed a metallic compound film on a wafer by using the vapor phase growth apparatus 100. The forming method of the metallic compound film includes a process for introducing material gas of the metallic compound film including Hf elements or Zr elements into the vapor phase growth apparatus 100 and forming the metallic compound film on the wafer, a process for taking out the wafer where the metallic compound film is formed from the vapor phase growth apparatus 100, a process for introducing reactant gas into the vapor phase growth apparatus 100 and fixing an unreacted organic substance 180 caused from material gas remaining in the vapor phase growth apparatus 100, a process for introducing a different wafer into the vapor phase growth apparatus 100, and a process for introducing the material gas into the vapor phase growth apparatus 100 in a state where the unreacted organic substance 180 is fixed and forming the metallic compound film on the different wafer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
