发明名称 POLISHING COMPOSITION FOR SILICON WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To eliminate the problem, wherein it is necessary to have a polishing composition capable of effectively preventing metal contamination with nickel, chrome, iron, copper or the like, and to provide a polishing composition for a silicon wafer capable of preventing the metal cotamination, particularly copper contamination, in the polishing of the silicon wafer. <P>SOLUTION: The polishing composition for a silicon wafer containing silica of average particle size of 5 to 500 nm and concentration of 0.05 to 30 wt% to the entire polishing composition, alkali of concentration of 0.01 to 10 wt% to the entire polishing composition, aminopolysulfonic acid and water, is provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005347737(A) 申请公布日期 2005.12.15
申请号 JP20050131580 申请日期 2005.04.28
申请人 NISSAN CHEM IND LTD 发明人 KASHIMA YOSHIYASU;OSHIMA MASAAKI;IWAMI EIICHIRO;SUEMURA NAOHIKO
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B37/00
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