发明名称 Image sensor and method of forming the same
摘要 An image sensor includes a photodiode formed in a substrate, a buffer oxide layer, a blocking layer, an upper oxide layer, and a transmission supplementary layer. The buffer oxide layer covers the photodiode, and the blocking layer is disposed on the buffer oxide layer to cover the photodiode. The upper oxide layer covers the blocking layer, and the transmission supplementary layer is interposed between the upper oxide layer and the buffer oxide layer to cover the photodiode. The transmission supplementary layer has a refractive index between the refractive index of the blocking layer and at least one reflective index selected from the refractive indexes of the buffer oxide layer and upper oxide layer.
申请公布号 US2005274995(A1) 申请公布日期 2005.12.15
申请号 US20050152452 申请日期 2005.06.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK WON-JE
分类号 H01L27/146;H01L31/0216;H01L31/062;H01L31/10;(IPC1-7):H01L31/062 主分类号 H01L27/146
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