MAGNETORESISTIVE RANDOM ACCESS DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A magnetoresistive random access memory device of the present invention comprises semiconductor structures which include a first semiconductor pattern in a line shape which is extended in a first direction of a substrate, and second semiconductor patterns which protrude in a third direction perpendicular to an upper plane of the first semiconductor pattern, and have the first and the second semiconductor patterns arranged in parallel in a second direction perpendicular to the first direction on the substrate; a common source line and a drain region arranged separately from each other in a third direction in the semiconductor structures; and a channel region arranged between the common source line and the drain region. The magnetoresistive random access memory device also comprises: gate structures used as a common gate between second semiconductor patterns facing each other in the second direction; word line structures electrically connecting the gate structures in the first direction; MTJ structures individually and electrically connected to an upper part of the second semiconductor patterns; and a bit line structure for electrically connecting two neighboring MTJ structures in the first direction and MTJ structures arranged in the second direction.