| 摘要 |
PROBLEM TO BE SOLVED: To allow the shapes of diffused source and drain layers to be made shallow in the depth direction and small in the lateral direction, and to allow redistribution of the impurity in a diffused extension layer to be suppressed, while suppressing manifestation of short channel effect accompanied with miniaturization. SOLUTION: A MIS-type semiconductor device comprises a P-type semiconductor substrate 11, a gate insulating film 14 formed on the semiconductor substrate 11, a gate electrode 15 formed on the gate insulating film 14, and N-type diffused source and drain layers 20 formed in regions of the semiconductor substrate 11 below both sides of the gate electrode 15. In the N-type diffused source and drain layers 20, there is formed P-type impurity-implanted regions 19 having a P-type impurity concentration lower than that of the N-type diffused source and drain layers 20. COPYRIGHT: (C)2006,JPO&NCIPI
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