| 摘要 |
<p>A COM switching device includes an n+-type layer formed on a p+-type layer, p+-type regions formed in the surface areas of an n--type layer formed on the n+-type layer, n+-type regions formed in the surface areas of the p+-type regions, and a gate electrode formed on an insulating layer over the surface areas of the p+-type regions which lie between the n+-type regions and the n--type layer. The n+-type layer is formed such that the amount of impurities per unit area is 5x1013 cm-2 or more.</p> |
