| 发明名称 |
METHOD FOR PRODUCING CARBON NANOTUBE SEMICONDUCTOR AND CARBON NANOTUBE SEMICONDUCTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To more exactly control the conductivity of a carbon nanotube semiconductor. <P>SOLUTION: The method for producing the carbon nanotube semiconductor includes (A) a process for preparing a silicon carbide layer 2 doped with an impurity governing the conductivity type, and (B) a process for forming the carbon nanotube semiconductor 5 by graphitizing a portion or the whole of the silicon carbide layer 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2005343744(A) |
申请公布日期 |
2005.12.15 |
| 申请号 |
JP20040165311 |
申请日期 |
2004.06.03 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKAHASHI KUNIMASA;KITAHATA MAKOTO;KUSUMOTO OSAMU;UCHIDA MASAO;YAMASHITA MASAYA;MIYANAGA RYOKO;HASHIMOTO KOICHI |
| 分类号 |
B82B3/00;C01B31/02;C23C16/42;H01L21/205;H01L21/265;H01L29/06 |
主分类号 |
B82B3/00 |
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