| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which a charge trap layer is used for a memory element by preventing the influence of ultraviolet rays to be generated in a manufacturing process. SOLUTION: This nonvolatile semiconductor memory device is provided with a nonvolatile semiconductor memory element configured of a gate insulating film (112) including a charge trap layer formed on a substrate, a gate electrode (100) formed on the gate insulating film (112) and a pair of diffusion layers (102) functioning as a source or a drain formed so that the gate electrode (100) can be gripped on a substrate surface layer, and a first conductor (104) for electrically connecting the pair of diffusion layers (102). The ends of the gate electrode (100) opposite to the pair of diffusion layers (102) are partially covered by a first conductor (104), when viewed from above. COPYRIGHT: (C)2006,JPO&NCIPI
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