| 摘要 |
A semiconductor apparatus comprising: a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the semiconductor substrate; a first electrode pad provided on the semiconductor substrate; a second electrode pad provided on the semiconductor substrate; a strip-like, first conductivity type semiconductor pattern; and a strip-like, second conductivity type semiconductor pattern. The strip-like, first conductivity type semiconductor pattern extends in the periphery region of the semiconductor substrate, and the first electrode pad is electrically connected to one end of the first conductivity type semiconductor pattern. The strip-like, second conductivity type semiconductor pattern constitutes a p-n junction in conjunction with the first conductivity type semiconductor pattern. The first and second electrode pads are electrically connected to both ends of the second conductivity type semiconductor pattern.
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