Redundancy circuit for NAND flash memory device, applies external data to main page buffer unit or redundancy page buffer unit according to redundancy control signal from contact addressable memory cell

摘要

The main/redundancy page buffer units sense data of memory cells of main/redundancy cell blocks, or buffer external data and apply buffered data to main/redundancy cell blocks, respectively. A select unit applies external data to main or redundancy page buffer units according to redundancy control signal from contact addressable memory cell.