| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor microfabrication method which perform low-cost and high accuracy slit working, by producing a wafer having no deviation from the designed size. SOLUTION: A thermal oxidation film 2 as a mask pattern having a slit-like mask window 2a of a direction ä111} and a plurality of slit-like mask windows 2b, 2c inclined in aθdirection to the direction ä111} is formed on the front surface of a semiconductor substrate 1, with the surface ä110} of the semiconductor substrate 1 as the front surface. And, slit grooves 3a-3c are formed on the semiconductor substrate 1 by the mask windows 2a-2c of the thermal oxidation film 2, by anisotropically etching the semiconductor substrate 1. The widths of these formed slit grooves 3a-3c are measured, and the rotation deviation is detected in theθdirection to the direction ä111} of the thermal oxidation film 2. Accordingly, the generation of a large quantity of faults can be prevented by indirectly evaluating the deviation of the rotating direction of the orientation flat of the same ingot without using a special inspection unit. COPYRIGHT: (C)2006,JPO&NCIPI
|
