Substrate for UV-lithography and fabrication process therefor

摘要

Production of a substrate comprises preparing a base layer with a thermal expansion coefficient of not more than 0.1 ppm/K, applying a first covering layer made from a semiconductor material, preferably silicon, on the base layer using a physical or chemical application process, especially by sputtering, CVD or PVD, and post-treating the covering layer. An Independent claim is also included for a substrate produced by the above process.