发明名称 |
Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device |
摘要 |
A semiconductor device includes a substrate divided into a memory cell region and a logic region. A split gate electrode structure is formed in a memory cell region of a substrate. A silicon oxide layer is formed on a sidewall of the split gate electrode structure and a surface of the substrate. A word line is formed on the silicon oxide layer that is positioned on the sidewall of the split gate electrode structure. The word line has an upper width and a lower width. The lower width is greater than the upper width. A logic gate pattern is formed on a logic region of the substrate. The logic gate pattern has a thickness thinner than the lower width of the word line.
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申请公布号 |
US6974748(B2) |
申请公布日期 |
2005.12.13 |
申请号 |
US20040920158 |
申请日期 |
2004.08.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON JUNG-HO;YU JAE-MIN;LEE DON-WOO;KWON CHUL-SOON;YOON IN-GU;LEE YONG-SUN;PARK JAE-HYUN |
分类号 |
H01L27/10;H01L21/336;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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