| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
In a semiconductor device having a trench-gate structure in which polysilicon doped with boron is embedded in a trench, insulating film formed on the inner wall of the trench comprises ONO film, and silicon nitride film constituting the ONO film is formed to such film thickness and film quality that boron can be suppressed from passing through the silicon nitride film. Silicon oxide film is formed so that a top oxide film is thin and a bottom oxide film is thick.
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| 申请公布号 |
US6974996(B2) |
申请公布日期 |
2005.12.13 |
| 申请号 |
US20030726590 |
申请日期 |
2003.12.04 |
| 申请人 |
DENSO CORPORATION |
发明人 |
SHIGA TOMOFUSA;AOKI TAKAAKI;OKABE YOSHIFUMI |
| 分类号 |
H01L21/28;H01L21/331;H01L21/336;H01L29/423;H01L29/51;H01L29/739;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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