| 摘要 |
A photodiode array (1) is provided with an n-type silicon substrate (3). A plurality of photodiodes (4) are formed in an array form on the surface opposite to the surface, onto which a light (L) to be detected enters, of the n-type silicon substrate (3). Recesses (6), each having a specified depth recessed below an area that does not correspond to a photodiode (4)-formed area, are formed in an area corresponding to the photodiode (4)-formed area on the light (L)- incident surface of the substrate (3).
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