MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve surface roughness and to reduce a slight remainder caused by a CMP process for planarizing a charge transfer electrode of a single layer electrode structure. SOLUTION: In a method of manufacturing a solid-state imaging device, a process of forming the charge transfer electrode comprises: a process of forming the pattern of a first layer silicon base conductive film constituting a first electrode 3a on a semiconductor substrate surface 1 with a gate oxide film 2 formed; a process of forming an insulating film that becomes an insulating film between electrodes 6 at least on the sidewall of the first electrode; a process of forming a second layer silicon base conductive film constituting a second electrode 3b on the semiconductor substrate surface with the first electrode 3a and the insulating film between the electrodes 6 formed; and a process of forming a charge transfer electrode with a single layer electrode structure including a process of planarizing the second layer silicon base conductive film by chemical mechanical polishing (CMP). The method is characterized by comprising a surface treating process by an alkali base chemical solution after the chemical mechanical polishing. COPYRIGHT: (C)2006,JPO&NCIPI