| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can sufficiently flattening the front surface of a film to be polished even if the area rate of a projection existing on the front surface of the film to be polished is relatively large. <P>SOLUTION: The method of manufacturing the semiconductor device includes a step of polishing the front surface of the film to be polished having an unevenness existing on the front surface by using a polishing pad 104. In the step of polishing the front surface of the film to be polished, if the area rate of the projection existing on the front surface of the film to be polished is 65% or more, the front surface of the film to be polished is polished while supplying abrasives 126 made by adding an additive made of a surfactant to polishing abrasive grains, and water 128 onto a polishing pad. Since the film to be polished is polished while supplying the abrasive and pure water, the obstruction of polishing of the film to be polished by the additive made of the surfactant can be suppressed. Accordingly, even if the area rate of the projection existing on the front surface of the film to be polished is relatively large, the front surface of the film to be polished can be flattened. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
