| 摘要 |
PROBLEM TO BE SOLVED: To provide an EEPROM device the area of which can be further reduced and which can be erased in units of bytes and a method for manufacturing the same. SOLUTION: The EEPROM device comprises a semiconductor substrate, a first region formed in a predetermined region of the semiconductor substrate and in which multiple memory transistors are arranged, and a second region formed adjacent to the first region and in which a selection transistor for supplying a predetermined voltage to a memory transistor in units of bytes is formed. At this time, the concentration of the substrate corresponding to the second region is higher than the concentration of the entire substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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