| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device of large dynamic range capable of significantly reducing kink for both reliability at high output and usability at low output. SOLUTION: The nitride semiconductor laser device comprises a laminated semiconductor layer in which n-type semiconductor layers 11-14, active layer 15, and p-type semiconductor layers 16-19 of nitride are laminated, and an out-going side laser mirror and reflection-side laser mirror positioned on the end face almost vertical to a waveguide region in which an active layer is sandwiched between the n-type semiconductor layer and p-type semiconductor layer. The active layer can emit light within the wavelength band including violet-blue to green, with the reflectivity of the laser mirror on the front side being 60% or less. COPYRIGHT: (C)2006,JPO&NCIPI
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