| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an end face protection film of a semiconductor laser which can prevent the attachment of particles to the end face during an end face protection film forming process and is simplified in working process. SOLUTION: On a cradle 11, spacers 12 and semiconductor laser bars 13 are alternately arranged. The spacers 12 are formed of ceramic of high purity alumina, and their corners 15 are chamfered and rounded along the longitudinal direction thereof. On the surfaces of each laser bar 23 which cross at right angles with end faces of a resonator, electrodes 26 and 27 are formed, respectively. The spacers 12 and the laser bars 13 which are arranged in order are fixed in close contact with each other by a fixing jig 14, and thereafter, a protection film having one reflection factor is formed on the top face of each laser bar 13 which is a cleaved surface by sputtering or the like. Then, the spacers 12 and the laser bars 13 are integrally reversed together, and another protection film having another reflection factor is formed on another end face of the resonator of each laser bar. COPYRIGHT: (C)2006,JPO&NCIPI
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