| 摘要 |
A method for forming conductive bumps is applied to a wafer. An under-bump-metallurgy structure and a first photo resist layer are subsequently formed on the wafer. The first photo resist layer, such as a dry film, is patterned to have some openings and then a second photo resist layer is filled into the openings, in which the thickness of the second photo resist layer is fewer than or equal to the thickness of the first photo resist layer. The second photo resist layer is then patterned to have some openings. Next, a conductive layer is formed in the openings and then both the first and second photo resist layers are removed. With the conductive layer as a mask, the exposed under-bump-metallurgy structure is removed and then the conductive layer is reflowed to form some conductive bumps. With two kinds of photo resist layers, the conductive bumps can be provided with increased heights and decreased pitches. |
