发明名称 BIPOLAR SWITCHING PCMO THIN FILM FORMING METHOD AND SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a PCMO thin film having a bipolar switching characteristic. SOLUTION: The method of forming the PCMO thin film having a bipolar switching characteristic comprises: a step 602 of forming a lower electrode; a first deposition step 606 of depositing an ultrafine crystal PCMO layer; a second deposition step 608 of depositing a polycrystalline PCMO layer; and a step 610 of forming a multilayer PCMO film having a bipolar switching characteristic. It preferably comprises a step 612 of forming an upper electrode on the PCMO film. When the polycrystalline PCMO layer is formed on the top of the ultrafine crystal PCMO, it can be written into high resistance state with a negative voltage pulse having a short pulse width. The multilayer PCMO film can be reset into low resistance state with a positive voltage pulse having a short pulse width. Similarly, when the formation of the ultrafine PCMO layer on the multilayer PCMO layer, it can be written into high resistance state with a positive voltage pulse having a short pulse width, and it can be reset into low resistance state with a negative voltage pulse having a short pulse width. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005340806(A) 申请公布日期 2005.12.08
申请号 JP20050141775 申请日期 2005.05.13
申请人 SHARP CORP 发明人 LI TINGKAI;LAWRENCE J CHARNESKI;ZHUANG WEI-WEI;EVANS DAVID R;HSU SHENG TENG
分类号 H01L27/04;H01L21/205;H01L21/822;H01L27/10;H01L29/06;H01L29/739;H01L45/00;(IPC1-7):H01L21/205 主分类号 H01L27/04
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