摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a PCMO thin film having a bipolar switching characteristic. SOLUTION: The method of forming the PCMO thin film having a bipolar switching characteristic comprises: a step 602 of forming a lower electrode; a first deposition step 606 of depositing an ultrafine crystal PCMO layer; a second deposition step 608 of depositing a polycrystalline PCMO layer; and a step 610 of forming a multilayer PCMO film having a bipolar switching characteristic. It preferably comprises a step 612 of forming an upper electrode on the PCMO film. When the polycrystalline PCMO layer is formed on the top of the ultrafine crystal PCMO, it can be written into high resistance state with a negative voltage pulse having a short pulse width. The multilayer PCMO film can be reset into low resistance state with a positive voltage pulse having a short pulse width. Similarly, when the formation of the ultrafine PCMO layer on the multilayer PCMO layer, it can be written into high resistance state with a positive voltage pulse having a short pulse width, and it can be reset into low resistance state with a negative voltage pulse having a short pulse width. COPYRIGHT: (C)2006,JPO&NCIPI |