Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit

摘要

A gate dielectric ( 150 ) for a gate ( 160 ) is formed by thermal oxidation simultaneously with as a dielectric on a surface of another gate ( 140 ). The dielectric thickness on the other gate is controlled by the dopant concentration in the other gate. The gates may be gates of different MOS transistors, or a select gate and a floating gate of a memory cell. Other features are also provided.