| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an occupied area of a semiconductor element. SOLUTION: A thin film transistor T1 comprising a gate electrode 6a, a source region 45, a drain region 46, GOLD regions 41 and 42, and a channel region 40 is formed in a region R1 of a TFT array substrate. A thin film transistor T2 comprising a gate electrode 6a, a source region 45, a drain region 46, GOLD regions 41 and 42, and a channel region 40 is formed in a region R2. Two pieces of GOLD length G1 and G2 (0.5μm) of the GOLD regions 41 and 42 of the thin film transistor T2 are set to be shorter than two pieces of GOLD length G3 and G4 (1.5μm) of the GOLD regions 41 and 42 of the thin film transistor T1. COPYRIGHT: (C)2006,JPO&NCIPI |
