| 摘要 |
PROBLEM TO BE SOLVED: To produce a semiconductor device having a nano structure by producing a atom-level Schottky barrier on the surface of a semiconductor wafer using wet process. SOLUTION: The surface of an n-type Si wafer 10 is made hydrophobic by hydrofluoric acid and immersed in a Cu ion aqueous solution having a work function greater than that of the semiconductor, and a Schottky barrier is formed from an Si-Cu contact of one atom level, thereby manufacturing a semiconductor device. Furthermore, the surface of the semiconductor is irradiated with light to inspect the state of the Schottky barrier formed on the surface and an optical voltage is measured to evaluate the surface state. The optical voltage is measured by transparent electrodes 16, 17 provided on the surface of the Si wafer. COPYRIGHT: (C)2006,JPO&NCIPI |
