SEMICONDUCTOR DEVICE AND ITS FABRICATING PROCESS

摘要

A semiconductor device comprising a capacitor fabricated on a semiconductor substrate (10) and having a lower electrode (32), a dielectric film (34) formed on the lower electrode and an upper electrode (36) formed on the dielectric film, a first insulating film (42) formed on the semiconductor substrate and the capacitor, a first interconnect line (48) formed on the first insulating film and electrically connected with the capacitor, a first hydrogen diffusion-preventing film (50) which is so formed as to cover the first interconnect line for preventing diffusion of hydrogen, a second insulating film (58) formed on the first hydrogen diffusion-preventing film and having a planarized surface, a third insulating film (62) formed on the second insulating film, a second interconnect line (70b) formed on the third insulating film, and a second hydrogen diffusion-preventing film (72) which is so formed as to cover the second interconnect line for preventing diffusion of hydrogen. Since the second hydrogen diffusion-preventing film located above the capacitor is planarized, the dielectric film can be surely prevented from being reduced by hydrogen.