| 发明名称 |
Method and device with durable contact on silicon carbide |
| 摘要 |
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
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| 申请公布号 |
US2005269573(A1) |
申请公布日期 |
2005.12.08 |
| 申请号 |
US20050083560 |
申请日期 |
2005.03.18 |
| 申请人 |
SENG WILLIAM F;WOODIN RICHARD L;WITT CARL A |
发明人 |
SENG WILLIAM F.;WOODIN RICHARD L.;WITT CARL A. |
| 分类号 |
H01L21/04;H01L29/24;H01L29/47;H01L29/812;H01L29/872;H01L31/0312;(IPC1-7):H01L31/031 |
主分类号 |
H01L21/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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