发明名称 ELECTRODE, ORGANIC THIN FILM TRANSISTOR USING THE SAME AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an electrode which can perform a low work function and a high work function, and to provide an organic thin film transistor which can improve device efficiency and a method of manufacturing the same. SOLUTION: The electrode is provided with an amorphous carbon film terminated with an electron suction group or the electrode having an amorphous carbon film terminated with an electron supply group. Moreover, the organic thin film transistor uses the electrode having the amorphous carbon film terminated with the electron suction group as a source electrode and/or a drain electrode when a channel is a p-type organic semiconductor, or uses the electrode having an amorphous carbon film terminated with an electron supply group as the source electrode and/or the drain electrode when the channel is an n-type organic semiconductor. Its manufacturing method is provided. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005340497(A) 申请公布日期 2005.12.08
申请号 JP20040157258 申请日期 2004.05.27
申请人 TOPPAN PRINTING CO LTD 发明人 GAMO SHUSUKE;NAKAMURA RYUICHI
分类号 H01L21/28;H01L21/285;H01L21/336;H01L29/786;H01L51/00;H01L51/05;(IPC1-7):H01L21/28 主分类号 H01L21/28
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