| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for extracting model parameter for describing characteristic of transistors with higher accuracy on a circuit simulation. SOLUTION: The apparatus is constituted for dividing a transistor as an extraction object with a MOS Tr dividing means 1 based on substrate surface impurity distribution in the channel width direction; giving model parameters extracted with the existing model parameter extracting means 7 to the divided transistor as the initial value; and dividing a voltage range extracted with an extracted voltage region dividing means 2 in order to individually optimize the model parameter for each transistor, and obtain the model parameter set which can describe characteristic with higher accuracy up to higher gate voltage from lower gate voltage, when aligning a sum of simulation characteristics to the actual characteristic with an extracting means 3, 4. COPYRIGHT: (C)2006,JPO&NCIPI
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