| 发明名称 |
Silicon germanium heterojunction bipolar transistor with step-up carbon profile |
| 摘要 |
A bipolar transistor having a collector connected to a base, the collector including an amount of carbon sufficient to prevent a conduction band barrier at a base-collector junction.
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| 申请公布号 |
US6972441(B2) |
申请公布日期 |
2005.12.06 |
| 申请号 |
US20020306415 |
申请日期 |
2002.11.27 |
| 申请人 |
INTEL CORPORATION |
发明人 |
SHAHEED M. REAZ |
| 分类号 |
H01L29/08;H01L29/24;H01L29/737;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/08 |
| 代理机构 |
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代理人 |
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