发明名称 |
Wide band erbium-doped fiber amplifier with gain enhancement |
摘要 |
A wide band erbium-doped fiber amplifier with a gain enhancement is provided comprising a first fiber amplifier adapted to amplify C-band components of an input optical signal, a second fiber amplifier connected to the first fiber amplifier in series while being disposed downstream from the first fiber amplifier to amplify L-band components of the input optical signal. A C/L splitter is disposed between the first and second fiber amplifiers and to split the amplified C and L-band optical signals to flow along different paths. A fiber reflector is disposed downstream from the second fiber amplifier to reflect the amplified L-band optical signal to flow backwards toward the second fiber amplifier. A circulator is disposed between the C/L splitter and the second fiber amplifier to guide the amplified L-band optical signal, reflected to flow backwards by the fiber reflector, so that the amplified L-band optical signal flows along a path different from that of optical signals applied to the circulator. A C/L combiner combines the amplified C-band optical signal split by the C/L splitter with the amplified L-band optical signal guided by the circulator, and applies the resultant optical signal to an output stage.
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申请公布号 |
US6972899(B2) |
申请公布日期 |
2005.12.06 |
申请号 |
US20050067428 |
申请日期 |
2005.02.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SEONG-TAEK;SONG KWAN-WOONG |
分类号 |
H01S3/10;G02B6/00;H01S3/06;H01S3/067;H01S3/16;H01S3/23;(IPC1-7):H01S3/00 |
主分类号 |
H01S3/10 |
代理机构 |
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主权项 |
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地址 |
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