发明名称 |
Fabricating a tapered hole incorporating a resinous silicon containing film |
摘要 |
A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.
|
申请公布号 |
US6972263(B2) |
申请公布日期 |
2005.12.06 |
申请号 |
US20040819964 |
申请日期 |
2004.04.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI |
分类号 |
H01L23/522;H01L23/532;H01L29/786;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|