| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix substrate for a display device which is loaded together with a plurality of kinds of TFTs having different gate insulating film thicknesses and with which a high-performance and high-speed operation is possible. SOLUTION: The active matrix substrate for the display device has: a plurality of scanning lines extending in row direction and a plurality of image data lines extending in column direction, formed in display area; semiconductor islands at each cross point of the scanning lines and the image data lines, and in peripheral circuit area; a first gate insulating film of a first thickness formed on each pixel semiconductor island; a first gate electrode made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer. COPYRIGHT: (C)2006,JPO&NCIPI |
