SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME

摘要

PROBLEM TO BE SOLVED: To provide a diode with reverse recovery characteristics is excellent, and breakdown voltage never deteriorates since no defect is generated on the upper main surface of a Si substrate even when wires are bonded onto an anode electrode and a manufacturing method of the same.

SOLUTION: The diode 100 is provided with the Si substrate having cathode N+ layer 101 and N- layer 102. A Schottky junction region 104 is formed on a region where an anode P layer 103 is not formed at an upper portion of the N- layer 102 by injecting impurities such as platinum of a barrier height lower than that of silicon. A barrier metal 105 is formed between the Si substrate and the anode electrode 106.

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