| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for making the size of a chip small by reducing the area of a flash memory with respect to a semiconductor device and an IC card including a nonvolatile memory. <P>SOLUTION: The semiconductor device and the IC card have a flash memory 18 which includes a plurality of nonvolatile memory cells and conducts erasing and writing in terms of a word line unit. The memory cells are MONOS type nonvolatile memory cells. In the flash memory 18, a voltage which is applied between a non-selective data line and a well during data writing to a selected memory cell, is set to a minimum value within a range, in which transistors of the non-selective memory cell are turned on and no error writing is generated, so as to prevent occurrence of mis-erasing of the non-selective memory cell. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
