| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a testing technique to examine wafer in the middle of a metal diffusion process, and a testing method for a semiconductor IC capable of changing the layers of pads to be connected in testing and those of pads to be used when all the production processes are completed for the purpose of preventing reliability degradation caused by pad cracks. <P>SOLUTION: When wafer test is performed for a product of n layers at the stage of m layers, where m is smaller than or equal to n, pads of m layers are provided when probing is performed at the stage of m layers. Furthermore, when wafer test is performed when n-layer diffusion is completed, pads of n layers are provided for probing at the stage of n layers. The m-layer pads and n-layer pads are not electrically connected in a pad region. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
